| PART |
Description |
Maker |
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| TVR10G |
Fast Recovery Pack: DO-41
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE: 600V CURRENT: 1.0A
|
Gulf Semiconductor
|
| RU4JMG |
Fast Recovery Pack: DO-201AD
GLASS PASSIVATED FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:600V CURRENT:2.0A
|
Gulf Semiconductor
|
| 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G |
Fast Recovery Pack: DO-41
GLASS PASSIVATED JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 600V CURRENT: 1.0A
|
Gulf Semiconductor
|
| ERB05GGR ERB05JGR |
Fast Recovery Pack: DO-41
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:400 & 600V CURRENT: 0.5A
|
Gulf Semiconductor
|
| UI02N60 |
N-Ch 600V Fast Switching MOSFETs
|
Unitpower Technology Limited
|
| SIDC07D60AF6 SIDC07D60AF610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
| STGW30NC60VD GW30NC60VD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT N沟道40A 600V47非常快速IGBT的开关PowerMESH商标
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| AP2302AGN-HF |
Advanced Power MOSFE
|
TY Semiconductor Co., Ltd
|
| CSFMT108-HF |
Halogen Free Super Fast Recovery Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=1A
|
Comchip Technology
|
| CFRM105-G |
Fast Recovery Rectifiers, V-RRM=600V, V-R=600V, I-O=1A
|
Comchip Technology
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
